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Document 32019R2199R(01)

    Corrigendum to Commission Delegated Regulation (EU) 2019/2199 of 17 October 2019 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items (Official Journal of the European Union of L 338 of 30 December 2019)

    OJ L 51, 25.2.2020, p. 17–17 (ET)
    OJ L 51, 25.2.2020, p. 13–13 (BG, ES, CS, DA, EL, IT, LV, LT, MT, PL, PT, RO, SK, SL, FI, SV)
    OJ L 51, 25.2.2020, p. 14–14 (DE, EN, FR, HR, HU, NL)

    ELI: http://data.europa.eu/eli/reg_del/2019/2199/corrigendum/2020-02-25/oj

    25.2.2020   

    EN

    Official Journal of the European Union

    L 51/14

    Corrigendum to Commission Delegated Regulation (EU) 2019/2199 of 17 October 2019 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items

    ( Official Journal of the European Union of L 338 of 30 December 2019 )

    On page 129, point f is replaced as follows:

    ‘f.

    Lithography equipment as follows:

    1.

    Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:

    a.

    A light source wavelength shorter than 193 nm; or

    b.

    Capable of producing a pattern with a “Minimum Resolvable Feature size” (MRF) of 45 nm or less;

    Technical Note:

    The “Minimum Resolvable Feature size” (MRF) is calculated by the following formula:

    Image 1

    w.tifhere the K factor = 0,35

    2.

    Imprint lithography equipment capable of producing features of 45 nm or less;

    Note: 3B001.f.2. includes:

    —

    Micro contact printing tools

    —

    Hot embossing tools

    —

    Nano-imprint lithography tools

    —

    Step and flash imprint lithography (S-FIL) tools

    3.

    Equipment specially designed for mask making having all of the following:

    a.

    A deflected focussed electron beam, ion beam or “laser” beam; and

    b.

    Having any of the following:

    1.

    A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or

    2.

    Not used;

    3.

    A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;

    4.

    Equipment designed for device processing using direct writing methods, having all of the following:

    a.

    A deflected focused electron beam; and

    b.

    Having any of the following:

    1.

    A minimum beam size equal to or smaller than 15 nm; or

    2.

    An overlay error less than 27 nm (mean + 3 sigma);’
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