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Document 32018R1922R(04)

Corrigendum to Commission Delegated Regulation (EU) 2018/1922 of 10 October 2018 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items (OJ L 319, 14.12.2018)

IO L 105, 16.4.2019, p. 67–67 (BG, ES, CS, DA, DE, ET, EL, EN, FR, HR, IT, LV, LT, HU, MT, NL, PL, PT, RO, SK, SL, FI, SV)

ELI: http://data.europa.eu/eli/reg_del/2018/1922/corrigendum/2019-04-16/oj

16.4.2019   

EN

Official Journal of the European Union

L 105/67

Corrigendum to Commission Delegated Regulation (EU) 2018/1922 of 10 October 2018 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items

( Official Journal of the European Union L 319 of 14 December 2018 )

On page 129, under item 3B001.f, points 3 and 4, the alignment of points is corrected:

for:

‘3.

Equipment specially designed for mask making having all of the following:

a.

A deflected focussed electron beam, ion beam or “laser” beam; and

b.

Having any of the following:

1.

A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or

2.

Not used;

3.

A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;

4.

Equipment designed for device processing using direct writing methods, having all of the following:

a.

A deflected focused electron beam; and

b.

Having any of the following:

1.

A minimum beam size equal to or smaller than 15 nm; or

2.

An overlay error less than 27 nm (mean + 3 sigma);’,

read:

‘3.

Equipment specially designed for mask making having all of the following:

a.

A deflected focussed electron beam, ion beam or “laser” beam; and

b.

Having any of the following:

1.

A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or

2.

Not used;

3.

A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;

4.

Equipment designed for device processing using direct writing methods, having all of the following:

a.

A deflected focused electron beam; and

b.

Having any of the following:

1.

A minimum beam size equal to or smaller than 15 nm; or

2.

An overlay error less than 27 nm (mean + 3 sigma);’.
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